以人为本 以奋斗为本 People-oriented struggle-oriented
Back to the top

Storage School 丨 QLC shines on stage, what is the difference with other flash memory?

日期: 2018-08-17
浏览次数: 101

  At the US Flash Memory Summit (FMS) on August 7, 2018, Hynix, Samsung, Toshiba, Western Digital, Intel and other NAND vendors have released QLC-based flash memory or QLC NAND-based SSD products to meet market demand for storage capacity. What is the growing demand, then what is QLC? Is its performance really better than SLC, MLC, TLC?

存储学堂丨QLC闪亮登台,与其他闪存有何不同?


  First let's review SLC, MLC and TLC.

   SLC: The full name is Single-Level Cell. Each Cell unit stores 1 bit of information, that is, only 0 and 1 voltage changes. The structure is simple and the voltage control is fast. The characteristics are long life, strong performance, and P/E life. Between 10,000 and 100,000 times, but the disadvantage is low capacity and high cost. After all, a Cell unit can only store 1 bit of information.

   MLC: The full name is Multi-Level Cell, which is actually corresponding to SLC. The NAND flash memory outside SLC is MLC type. We often say that MLC refers to 2bit MLC, each cell unit stores 2bit information, and the voltage has There are four variations of 000, 01, 10, and 11, so it requires more complicated voltage control than SLC, and the pressurization process takes longer, which means that the write performance is reduced, and the reliability is also reduced. The P/E life is based on Different processes range from 3,000 to 5,000, and some are even lower.

   TLC: It is the Trinary-Level Cell. It is 3bit MLC. Each cell stores 3 bits of information. The voltage varies from 000 to 111. The capacity is increased by 1/3 compared with MLC. The cost is lower, but the architecture is lower. More complicated, P/E programming time is long, writing speed is slow, P/E life is also reduced to 1000-3000 times, and some cases will be lower.

  The latest QLC is Quad-Level Cell, or 4bit MLC. There are 16 variations in voltage from 0000 to 1111, and the capacity is increased by 33%, but the write performance and P/E lifetime will decrease again.

存储学堂丨QLC闪亮登台,与其他闪存有何不同?

   Compared with the other three flash types, QLC has further degraded performance. Why are the major manufacturers still launching?

    Advances in technology have prompted QLC to be widely accepted

   Just as TLC flash was first introduced, QLC also faced the shortcomings of performance and reliability degradation. It is reasonable to say that this technology should be worried or even rejected, but fortunately NAND flash has entered the era of 3D NAND, not 2D NAND era, so 3D NAND The QLC of the era is very different from the TLC of 2D NAND.

   In the era of 2D NAND flash memory, in order to improve the NAND capacity, it is necessary to continuously improve the NAND process technology, thereby increasing the transistor density, increasing the NAND capacity, and reducing the cost, but the NAND process is improved and the reliability is deteriorated. In the 3D NAND era, the NAND capacity is increased by the number of layers in the stack, and the process can be maintained with larger capacity and reliability.

   And the initial TLC flash P/E life is only 100-150 times, and QLC directly uses 3DNAND technology, P / E life has reached 1000 times, completely not lost in the current 3D TLC flash memory, to meet the needs of everyday users.

存储学堂丨QLC闪亮登台,与其他闪存有何不同?


    Ultra-large capacity SSD demand drives QLC to become mainstream

With the market demand, ultra-large capacity SSD has become a major demand, terabyte SSD will be the starting level, even though the ultra-large capacity SSD performance can't beat the existing MLC/TLC flash hard disk, it is not impossible to replace the HDD hard disk. . QLC flash hard disk write speed is about 200-300MB / s, write performance is much higher than HDD hard disk, while capacity can reach 10-100TB, both performance and capacity, have been higher than the existing HDD hard drive.

存储学堂丨QLC闪亮登台,与其他闪存有何不同?

   The QLC era has arrived, perhaps worse than MLC and TLC in performance, but QLC flash memory in the era of 3D NAND solves the demand for large capacity in the market, and overcomes the shortcomings of HDD hard disk, so QLC will have a great possibility to become the future storage market. Mainstream.

存储学堂丨QLC闪亮登台,与其他闪存有何不同?

   Rui Shi International always pays attention to the emergence of new technologies, and joins the trend to research and produce storage products that meet market demand. Rui Shi International and everyone witness the continued birth of QLC SSD.

Long press the identification QR code to follow us~

Come at a speed, because of beauty


  About Ramsta  


Ruishi International Headquarters is located in Hong Kong and Taiwan. It has set up a research and development center in Shenzhen. It has set up a sales company in Shenzhen. It has a storage product R&D and manufacturing base in Taiwan and Shenzhen. It is committed to the research and development and manufacturing of high-end, cutting-edge storage products. Rui Shi established the Greater China Marketing Center in Shenzhen. As a professional storage product R&D, manufacturing and sales integration service provider, Ruishi currently has a place in the SSD solid state drive, DARM module memory, TF flash card and other series of storage products.


固态硬盘你们了解多少?

201, building 1, Meitai Industrial Park, No. 1231, sightseeing Road, Guihua community, Guanlan street, Longhua New District, Shenzhen
Phone:400 900 2289
传真:+86 0755-2788 8009
邮编:330520
Copyright@ 2019-2023 Ramsta International All rights reserved
Xiniu provides enterprise cloud services
X
1

QQ设置

3

SKYPE 设置

4

阿里旺旺设置

等待加载动态数据...

等待加载动态数据...

5

电话号码管理

  • 4006-900-2289
6

二维码管理

等待加载动态数据...

等待加载动态数据...

展开